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US 7,682,930 B2Granted
Method of forming elevated photosensor and resulting structure
AssigneeAptina Imaging Corporation
InventorsSaijin Liu, Shu Qin
Life of this patent
Estimating the term…
Abstract
Elevated crystal silicon photosensors for imagers pixels, each photosensor formed of crystal silicon above the surface of a substrate that has pixel circuitry formed thereon. The imager has a high fill factor and good imaging properties due to the crystal silicon photosensor.
Claims13
A method of forming a pixel comprising:
- forming a photosensor in a first wafer;
- forming pixel circuitry on a second wafer;
- bonding said first wafer to said second wafer;
- and
- subsequent to the bonding act, connecting said photosensor to said pixel circuitry by forming a conductive line in contact with a doped region of the first wafer and in contact with the photosensor.
2 more elements
A method of forming a pixel array comprising:
- forming a photosensitive crystal silicon material over a first wafer;
- implanting hydrogen ions underneath the photosensitive crystal silicon material in said first wafer;
- forming pixel circuitry including transistors on a second wafer;
- forming an insulation material over the pixel circuitry;
- polishing a top surface of the insulation material;
- treating a top surface of each of the first and second wafers;
- bonding the first and second wafers to form one structure;
- removing at least a portion of the first wafer from the one structure;
- forming individual photosensors from said photosensitive crystal silicon material;
- and
- subsequent to the bonding act, connecting each photosensor to said pixel circuit by forming a conductive line in contact with a doped region of the first wafer and in contact with the photosensor.
8 more elements
Dependencies are inferred from the claim text.