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US 7,682,923 B2Granted
Method of forming metal trench pattern in thin-film device
AssigneeTDK Corporation
InventorsAkifumi Kamijima, Hideyuki Yatsu
Life of this patent
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Abstract
A method of forming a metal trench pattern in a thin-film device includes a step of depositing an electrode film on a substrate or on a base layer, a step of forming a resist pattern layer having a trench forming portion used to make a trench pattern, on the deposited electrode film, a step of forming a metal layer for filling spaces in the trench forming portion and for covering the trench forming portion, by performing plating through the formed resist pattern layer using the deposited electrode film as an electrode, a step of planarizing at least a top surface of the formed metal layer until the trench forming portion of the resist pattern layer is at least exposed, and a step of removing the exposed trench forming portion of the resist pattern layer.
Claims25
A method of forming a metal trench pattern in a thin-film device, comprising the steps of:
- depositing an electrode film on a substrate or on a base layer;
- forming a resist pattern layer having a trench-forming portion used to make a trench pattern, on the deposited electrode film;
- forming a metal layer for filling spaces in said trench-forming portion and for covering said trench-forming portion, by performing plating through the formed resist pattern layer using the deposited electrode film as an electrode;
- removing a part of the resist pattern layer and a part of the electrode film, which are uncovered by the formed metal layer;
- depositing a peripheral area layer on the metal layer;
- planarizing top surfaces of the formed metal layer and the deposited peripheral area layer until said trench-forming portion of said resist pattern layer is at least exposed;
- and
- removing the exposed trench-forming portion of said resist pattern layer.
5 more elements
A method of forming a metal trench pattern in a thin-film device, comprising the steps of:
- depositing an electrode film on a substrate or on a base layer;
- forming a resist pattern layer having a trench-forming portion used to make a trench pattern, on the deposited electrode film;
- forming a metal layer for filling spaces in said trench-forming portion and for covering said trench-forming portion, by performing plating through the formed resist pattern layer using the deposited electrode film as an electrode;
- planarizing a top surface of only the formed metal layer until said trench-forming portion of said resist pattern layer is at least exposed;
- and
- removing the exposed trench-forming portion of said resist pattern layer.
3 more elements
A method of forming a metal trench pattern in a thin-film device, comprising the steps of:
- depositing an electrode film on a substrate or on a base layer;
- forming a resist pattern layer having a trench-forming portion used to make a trench pattern, on the deposited electrode film;
- forming a first metal layer made of a first metal material for filling spaces in said trench-forming portion, by performing plating through the formed resist pattern layer using the deposited electrode film as an electrode;
- forming a second metal layer made of a second metal material for covering at least said trench-forming portion, by performing plating through the formed resist pattern layer using the deposited electrode film as an electrode, said second metal material having a higher chemical activity than that of said first metal material;
- planarizing at least a top surface of the formed second metal layer just before said trench-forming portion of said resist pattern layer is exposed;
- removing said second metal layer to expose said trench-forming portion of said resist pattern layer;
- and
- removing the exposed trench-forming portion of said resist pattern layer.
5 more elements
A method of forming a metal trench pattern in a thin-film device, comprising the steps of:
- depositing an electrode film on a substrate or on a base layer;
- forming a resist pattern layer having a trench-forming portion used to make a trench pattern, on the deposited electrode film;
- forming a first metal layer made of a first metal material for filling spaces in said trench-forming portion, by performing plating through the formed resist pattern layer using the deposited electrode film as an electrode;
- shaving by an ashing process a top surface of the formed resist pattern layer;
- forming a second metal layer made of a second metal material for covering at least said trench-forming portion, by performing plating through the shaved resist pattern layer using the deposited electrode film as an electrode, said second metal material having a higher chemical activity than that of said first metal material;
- planarizing top surfaces of the formed first and second metal layers just before said trench-forming portion of said resist pattern layer is exposed;
- removing said second metal layer to expose said trench-forming portion of said resist pattern layer;
- and
- removing the exposed trench-forming portion of said resist pattern layer.
6 more elements
A manufacturing method of a thin-film device, comprising the steps of:
- depositing an electrode film on a substrate or on a base layer;
- forming a resist pattern layer having a trench-forming portion used to make a trench pattern, on the deposited electrode film;
- forming a metal layer for filling spaces in said trench-forming portion and for covering said trench-forming portion, by performing plating through the formed resist pattern layer using the deposited electrode film as an electrode;
- removing a part of the resist pattern layer and a part of the electrode film, which are uncovered by the formed metal layer;
- depositing a peripheral area layer on the metal layer;
- planarizing top surfaces of the formed metal layer and the deposited peripheral area layer until said trench-forming portion of said resist pattern layer is at least exposed;
- and
- removing the exposed trench-forming portion of said resist pattern layer.
5 more elements
A manufacturing method of a thin-film device, comprising the steps of:
- depositing an electrode film on a substrate or on a base layer;
- forming a resist pattern layer having a trench-forming portion used to make a trench pattern, on the deposited electrode film;
- forming a metal layer for filling spaces in said trench-forming portion and for covering said trench-forming portion, by performing plating through the formed resist pattern layer using the deposited electrode film as an electrode;
- planarizing a top surface of only the formed metal layer until said trench-forming portion of said resist pattern layer is at least exposed;
- and
- removing the exposed trench-forming portion of said resist pattern layer.
3 more elements
A manufacturing method of a thin-film device, comprising the steps of:
- depositing an electrode film on a substrate or on a base layer;
- forming a resist pattern layer having a trench-forming portion used to make a trench pattern, on the deposited electrode film;
- forming a first metal layer made of a first metal material for filling spaces in said trench-forming portion, by performing plating through the formed resist pattern layer using the deposited electrode film as an electrode;
- forming a second metal layer made of a second metal material for covering at least said trench-forming portion, by performing plating through the formed resist pattern layer using the deposited electrode film as an electrode, said second metal material having a higher chemical activity than that of said first metal material;
- planarizing at least a top surface of the formed second metal layer just before said trench-forming portion of said resist pattern layer is exposed;
- removing said second metal layer to expose said trench-forming portion of said resist pattern layer;
- and
- removing the exposed trench-forming portion of said resist pattern layer.
5 more elements
A manufacturing method of a thin-film device, comprising the steps of:
- depositing an electrode film on a substrate or on a base layer;
- forming a resist pattern layer having a trench-forming portion used to make a trench pattern, on the deposited electrode film;
- forming a first metal layer made of a first metal material for filling spaces in said trench-forming portion, by performing plating through the formed resist pattern layer using the deposited electrode film as an electrode;
- shaving by an ashing process a top surface of the formed resist pattern layer;
- forming a second metal layer made of a second metal material for covering at least said trench-forming portion, by performing plating through the shaved resist pattern layer using the deposited electrode film as an electrode, said second metal material having a higher chemical activity than that of said first metal material;
- planarizing top surfaces of the formed first and second metal layers just before said trench-forming portion of said resist pattern layer is exposed;
- removing said second metal layer to expose said trench-forming portion of said resist pattern layer;
- and
- removing the exposed trench-forming portion of said resist pattern layer.
6 more elements
Dependencies are inferred from the claim text.