Pre-epitaxial disposable spacer integration scheme with very low temperature selective epitaxy for enhanced device performance

A method for a pre-epitaxial disposable spacer integration scheme with very low temperature selective epitaxy for enhanced device performance, comprising:

• forming a first gate and a second gate on a substrate;
• forming an oxide layer on said first gate, said second gate, and said substrate;
• forming a nitride layer on said oxide layer;
• removing portions of said nitride layer adjacent said first gate, portions of said oxide layer adjacent said first gate, and portions of said substrate adjacent said first gate, so as to form source and drain recesses adjacent said first gate;
• removing remaining portions of said nitride layer so as to expose remaining portions of said oxide layer;
• precleaning said remaining portions of said oxide layer and said source and drain recesses using a chemical composition that is selective only to oxide and silicon;
• and
• after said precleaning, epitaxially growing a strained material in said source and drain recesses using an epitaxial growth process that is selective to oxide.

A method for a pre-epitaxial disposable spacer integration scheme with very low temperature selective epitaxy for enhanced device performance, comprising:

• forming a substrate;
• forming a first gate and a second gate over said substrate;
• forming first nitride spacers proximate said first gate and second nitride spacers proximate said second gate;
• forming an oxide mask on said substrate proximate said first nitride spacers, on said first nitride spacers, and over said first gate;
• forming a cover over said oxide mask;
• forming oxide spacers on said second nitride spacers;
• forming source and drain recesses in said substrate proximate outer sidewalls of said oxide spacers;
• removing said cover;
• and
• epitaxially growing a strained material in said source and drain recesses using an epitaxial growth process that is selective to oxide.

A method for a pre-epitaxial disposable spacer integration scheme with very low temperature selective epitaxy for enhanced device performance, comprising:

• forming a substrate, comprising forming an oxide layer on a first silicon layer, and forming a second silicon layer on said oxide layer;
• forming a first gate and a second gate over said substrate;
• forming first nitride spacers on said first gate and second nitride spacers on said second gate;
• forming an oxide mask on said substrate proximate said first nitride spacers, on said first nitride spacers, and over said first gate;
• forming a cover over said oxide mask;
• forming oxide spacers on said second nitride spacers;
• forming source and drain recesses in said substrate proximate outer sidewalls of said oxide spacers;
• removing said cover;
• and
• epitaxially growing a strained material in said source and drain recesses using an epitaxial growth process that is selective to oxide.