Electronic assemblies having a low processing temperature
AssigneeIntel Corporation
InventorsDaoqiang Lu, Chuan Hu
Life of this patent
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Abstract
Embodiments relate to electronic assemblies and methods for forming electronic assemblies. One method includes providing a die and a copper heat spreader that are to be coupled to one another through a thermal interface material. A layer of tin is formed on the copper heat spreader. The heat spreader and the die are clamped together with the tin positioned between the heat spreader and the die. The assembly is heated so that the tin melts and forms at least one intermetallic compound with copper from the heat spreader. The heat spreader is then coupled to the die through the intermetallic compound.
Claims17
A method of forming an electronic assembly, comprising:
- providing a die;
- providing a heat spreader, the heat spreader adapted to transmit heat from the die;
- forming a layer comprising silver on the heat spreader;
- forming a layer comprising indium in direct contact with the silver, so that the silver is positioned between the heat spreader and the indium;
- wherein the layer comprising silver and the layer comprising indium are present in amounts so that the silver to indium mass ratio is no smaller than 2.8 to 1;
- and
- heating the silver and indium so that the indium melts and forms at least one intermetallic compound with the silver, the heat spreader being coupled to the die through the at least one intermetallic compound.
A method of forming an electronic assembly, comprising:
- providing a die;
- providing a heat spreader adapted to transmit heat from the die;
- forming a layer comprising silver on the heat spreader;
- forming a layer comprising indium on the silver, wherein the silver is positioned between the heat spreader and the indium;
- wherein the layer comprising silver and the layer comprising indium are present in amounts so that the silver to indium mass ratio is no smaller than 2.8 to 1;
- and
- heating the silver and indium so that the indium melts and forms at least one intermetallic compound with the silver, the at least one intermetallic compound being positioned between the heat spreader and the die, wherein the indium is heated for a sufficient time so that all of the indium is depleted.
A method of forming an electronic assembly, comprising:
- providing a die;
- providing a heat spreader adapted to transmit heat from the die;
- forming a layer comprising silver on the heat spreader;
- forming a layer comprising indium in direct contact with the silver, so that the silver is positioned between the heat spreader and the indium;
- wherein the layer comprising silver and the layer comprising indium are present in amounts so that the silver to indium mass ratio is no smaller than 2.8 to 1;
- and
- heating the silver and indium so that the indium melts and forms at least one intermetallic compound with the silver, the at least one intermetallic compound being positioned between the heat spreader and the die;
- wherein the heating the silver and indium includes a first heating operation in the range of 200° C. to 250° C. for 2 to 5 minutes and a second heating operation in the range of 140° C. to 180° C. for 10 to 24 hours.
Dependencies are inferred from the claim text.