Organic thin-film transistor and manufacturing method thereof
AssigneeKonica Minolta Holdings, Inc.
InventorKatsura Hirai
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Abstract
Disclosed are an organic thin-film transistor and a manufacturing method thereof, the organic thin-film transistor comprising a support and provided thereon, a gate electrode, an insulation layer, a source electrode, a drain electrode, and an organic semiconductor layer, the support comprising at least one of resins, and the organic semiconductor layer containing at least one of organic semiconducting materials, wherein a phase transition temperature of one of the organic semiconducting materials is not more than a glass transition point of one of the resins.
Claims9
A manufacturing process of an organic thin-film transistor comprising a support and provided thereon, a gate electrode, an insulation layer, a source electrode, a drain electrode, and an organic semiconductor layer, the support comprising at least one of resins, and the organic semiconductor layer containing at least one of organic semiconducting materials, wherein a phase transition temperature of one of the organic semiconducting materials is not more than a glass transition point of one of the resins, the process comprising the steps of:
- providing a solution or dispersion solution of the organic semiconducting material;
- coating the solution or dispersion solution on the support or on the insulation layer to form an organic semiconductor layer;
- heat treating the resulting organic semiconductor layer;
- and
- cooling the heat treated organic semiconductor layer at a cooling speed of not more than 5° C./sec.
Dependencies are inferred from the claim text.