Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation
AssigneeInternational Business Machines Corporation
InventorsMark W. Hart, Christie R. K. Marrian, Gary M. McClelland, Charles T. Rettner, Hemantha K. Wickramasinghe
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Abstract
A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.
Claims20
A method of forming a memory array, said method comprising:
- forming a bit line over a substrate, wherein said bit line comprises a first hard mask layer;
- depositing a multilayer stack over said bit line;
- configuring a word line over said multilayer stack, wherein said word line comprises a second hard mask layer and is at an angle to said bit line, wherein said multilayer stack comprises a memory storage material, wherein said memory storage material is formed of a phase change material layer, and
- wherein said memory storage material directly contacts said bit line and said substrate;
- and
- creating a rectifying junction at an interface between said bit line and said phase-change material layer.
A method of forming a memory array, said method comprising:
- forming a substrate;
- forming a bit line over said substrate, wherein said bit line comprises a first chromium mask layer adapted to be resistant to both a first and second etching process;
- forming a multilayer stack over said bit line, wherein said multilayer stack comprises a phase-change material layer and a heater layer;
- forming a word line over said multilayer stack, wherein said word line comprises a second chromium mask layer adapted to be resistant to said second etching process, wherein said word line is positioned at an angle to said bit line, and wherein said phase-change material layer is in direct contact with each of said bit line and said substrate;
- and
- creating a rectifying junction at an interface between said bit line and said phase-change material layer.
A method of forming a memory array, said method comprising:
- forming a bit line over a substrate, wherein said bit line comprises a first chromium hard mask layer;
- depositing a multilayer stack over said bit line;
- configuring a word line over said multilayer stack, wherein said word line comprises a second chromium hard mask layer and is at an angle to said bit line, wherein said multilayer stack comprises a memory storage material, wherein said memory storage material is formed of a phase-change material layer, and wherein said memory storage material directly contacts said bit line and said substrate;
- and
- creating a rectifying junction at an interface between said bit line and said phase-change material layer.
Dependencies are inferred from the claim text.