Superlattice photodiodes with polyimide surface passivation
AssigneeMP Technologies, LLC
InventorManijeh Razeghi
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Abstract
The subject invention comprises the realization of a superlattice photodiode with polyimide surface passivation. Effective surface passivation of type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment, nor time, can be realized by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer.
Claims20
A method of passivating type-II InAs/GaSb superlattice photodiodes, comprising depositing a passivation layer consisting of polyimide on the whole of said type-II InAs/GaSb superlattice photodiode.
An infrared imaging device, comprising:
- a substrate;
- a type-II superlattice photodiode grown on the substrate;
- a plurality of diode mesas created by using UV photolithography and electron-cyclotron resonant-reactive ion etching in a BCl3-based etch chemistry
- a plurality of top and bottom contacts deposited on the superlattice structure;
- and
- a 2 μm-thick polyimide passivation layer of polyimide spun on the entire surface of the infrared imaging device.
Dependencies are inferred from the claim text.