Method for manufacturing semiconductor optical device
AssigneeMitsubishi Electric Corporation
InventorsYoshihiko Hanamaki, Takehiro Nishida, Makoto Takada, Kenichi Ono
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Abstract
A method for manufacturing a semiconductor optical device includes: forming a p-type cladding layer; forming a capping layer on the p-type cladding layer, the capping layer being selectively etchable relative to the p-type cladding layer; forming a through film on the capping layer; forming a window structure by ion implantation; removing the through film after the ion implantation; and selectively removing the capping layer using a chemical solution.
Claims14
A method for manufacturing a semiconductor optical device, comprising, sequentially:
- forming a p-type cladding layer;
- forming a capping layer on said p-type cladding layer, said capping layer being selectively etchable relative to said p-type cladding layer;
- forming a through film on said capping layer;
- forming a window structure by implanting ions through said through film and annealing, after implanting the ions;
- removing said through film after implanting the ions;
- and
- selectively removing said capping layer from said p-type cladding layer.
A method for manufacturing a semiconductor optical device, comprising, sequentially:
- forming a p-type cladding layer;
- forming a first capping layer on said p-type cladding layer, said first capping layer being selectively etchable relative to said p-type cladding layer;
- forming a second capping layer on said first capping layer to prevent a constituent of said first capping layer from leaving said first capping layer, said second capping layer being selectively etchable relative to said first capping layer;
- forming a through film on said second capping layer;
- forming a window structure by implanting ions through said through film and annealing, after implanting the ions;
- removing said through film after implanting the ions;
- selectively removing said second capping layer from said first capping layer;
- and
- selectively removing said first capping layer from said p-type cladding layer.
A method for manufacturing a semiconductor optical device, comprising, sequentially:
- forming an active layer supported by a substrate;
- forming a phosphorus-based Group III-V semiconductor layer supported by said active layer;
- and
- forming a silicon oxide-based film or a silicon nitride-based film supported by said phosphorus-based Group III-V semiconductor layer.
Dependencies are inferred from the claim text.