Method of manufacturing semiconductor laser device including light shield plate
AssigneeSamsung LED Co., Ltd.
InventorsHan-youl Ryu, Kyoung-ho Ha, Youn-joon Sung
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Abstract
Provided is a method of manufacturing a semiconductor laser device having a light shield film comprising: forming a light emission structure by depositing a first clad layer, an active layer and a second clad layer on a substrate; depositing a light shield film and a protection film on the light emission face of the light emission structure; removing the light shield film corresponding to an area of the light emission face of the light emission structure including and above the first clad layer; and removing the protection layer.
Claims23
A method of manufacturing a semiconductor laser device comprising:
- forming a light emission structure by sequentially depositing material layers including a first clad layer, an active layer and a second clad layer on a substrate;
- sequentially depositing a light shield film and a protection film on a light emission face of the light emission structure;
- removing a portion of the light shield film corresponding to the area of the light emission structure above and including the first clad layer using a first etchant which selectively etches the light shield film;
- and
- removing the protection film.
A method of manufacturing a semiconductor laser device comprising:
- forming a light emission structure by sequentially depositing a first clad layer, an active layer and a second clad layer on a substrate;
- forming a light shield film which covers at least an area below the first clad layer of a light emission face of the light emission structure;
- forming a protection film on the light shield film so that the upper end of the protection film may not exceed the upper end of the light shield film;
- and
- removing a portion of the light shield film corresponding to an area of the light emission face of the light emission structure including and above the first clad layer;
- and
- removing the protection film.
A method of manufacturing a semiconductor laser device comprising:
- forming a light emission structure by sequentially depositing a first clad layer, an active layer and a second clad layer on a substrate;
- sequentially depositing a light shield film and a protection film, which are formed of different materials from each other, on the light emission face of the light emission structure;
- selectively etching only the light shield film and removing a portion of the light shield film corresponding to an area of the light emission face of the light emission structure including and above the first clad layer;
- and
- removing the protection film.
Dependencies are inferred from the claim text.