Light emitting diode and fabrication method thereof
AssigneeLG Innotek Co., Ltd.
InventorSeong Jae Kim
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Abstract
A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1-x)N and a range of x is given by 0<x<2, and a thickness of the GaN layer having indium is 50-200 Å.
Claims18
A method for fabricating an LED (light emitting diode), comprising:
- forming an N-type GaN layer;
- forming at least one GaN layer having indium and at least one GaN layer above the N-type GaN layer, wherein the at least one GaN layer is formed directly on the at least one GaN layer having indium and wherein a thickness of the at least one GaN layer having indium is less than 200 Å;
- forming an active layer directly on the at least one GaN layer;
- and
- forming a P-type GaN layer above the active layer.
A method for fabricating an LED (light emitting diode), comprising:
- forming an N-type GaN layer;
- forming at least one GaN layer having indium above the N-type GaN layer;
- forming at least one GaN layer directly on the at least one GaN layer having indium;
- forming an active layer directly on the at least one GaN layer;
- and
- forming a P-type GaN layer above the active layer.
Dependencies are inferred from the claim text.