Semiconductor fabrication system, and flow rate correction method and program for semiconductor fabrication system

A method of correcting a flow rate for a semiconductor fabrication apparatus that performs a substrate process on a substrate in a processing unit for manufacturing a semiconductor device by supplying plural kinds of gases to the processing unit, by using a plurality of flow rate controllers that compare output voltages of detection units for detecting gas flow rates of gas supply passages with set voltages that correspond to set flow rates set in advance, and controls the gas flow rates of the gas supply passages to be the set flow rates, the method comprising:

• a zero point shift detection step of, before the substrate process is performed, detecting output voltages of the flow rate controllers in a state where atmospheres in the flow rate controllers are replaced with processing gases used for the substrate process and each of stop valves respectively installed in upstream and downstream sides of the flow rate controllers is closed, and storing in a storage unit the output voltages as zero point shifts respectively for the processing gases;
• and
• a zero point shift correction step of, when the substrate process is performed, correcting the set voltages to correspond to gas flow rates of the processing gases used for the substrate process based on the zero point shifts of the flow rate controllers stored in the storage unit, and setting the corrected set voltages respectively in the flow rate controllers.

A method of correcting a flow rate for a semiconductor fabrication apparatus that performs a substrate process on a substrate in a processing unit for manufacturing a semiconductor device by supplying plural kinds of gases to the processing unit, by using a flow rate controller that compares output voltages of a detection unit for detecting gas flow rates of a gas supply passage with set voltages that correspond to set flow rates set in advance, and controls the gas flow rates of the gas supply passage to be the set flow rates, the method comprising:

• a zero point shift detection step of, before the substrate process is performed, detecting output voltages of the flow rate controller respectively for the processing gases in a state where an atmosphere in the flow rate controller is replaced with each of the processing gases used for the substrate process and each of stop valves respectively installed in an upstream and a downstream side of the flow rate controller is closed, and storing the output voltages as zero point shifts respectively for the processing gases in a storage unit;
• and
• a zero point shift correction step of, when the substrate process is performed, correcting the set voltages to correspond to gas flow rates of the processing gases used for the substrate process based on the zero point shifts of the flow rate controllers stored in the storage unit, and setting the corrected set voltages in the flow rate controller.

A method of correcting a flow rate for a semiconductor fabrication apparatus that performs a substrate process on a substrate in a processing unit for manufacturing a semiconductor device by supplying a gas to the processing unit, by using a flow rate controller that compares an output voltage of a detection unit for detecting a gas flow rate of a gas supply passage with a set voltage that corresponds to a set flow rate set in advance, and controls the gas flow rate of the gas supply passage to be the set flow rate, the method comprising:

• a second zero point shift detection step of, before the substrate process is performed, detecting an output voltage of the flow rate controller as a first zero point shift in a state where an inside of the flow rate controller is vacuum exhausted by a vacuum exhaust unit and each of stop valves is closed, performing a zero point correction based on the first zero point shift, subsequently detecting another output voltage of the flow rate controller in a state where an atmosphere in the flow rate controller is replaced at least with a processing gas used for the substrate process and each of the stop valves is closed, and storing said another output voltage as a second zero point shift in a storage unit;
• and
• a second zero point shift correction step of, when the substrate process is performed, detecting an output voltage of the flow rate controller as another first zero point shift in a state where the inside of the flow rate controller is vacuum exhausted by the vacuum exhaust unit and each of the stop valves is closed, performing the zero point correction based on said another first zero point shift, correcting the set voltage to correspond to a flow rate of the processing gas used for the substrate process based on the second zero point shift stored in the storage unit, setting the corrected set voltage in the flow rate controller.

A method of correcting a flow rate for a semiconductor fabrication apparatus that performs a substrate process on a substrate in a processing unit for manufacturing a semiconductor device by supplying a gas to the processing unit, by using a flow rate controller that compares an output voltage of a detection unit for detecting a gas flow rate of a gas supply passage with a set voltage that corresponds to a set flow rate set in advance, and controls the gas flow rate of the gas supply passage to be the set flow rate, the method comprising:

• a second zero point shift detection step of, before the substrate process is performed, detecting an output voltage of the flow rate controller as a first zero point shift in a state where an inside of the flow rate controller is vacuum exhausted by a vacuum exhaust unit and each of stop valves is closed, performing a zero point correction based on the first zero point shift, subsequently detecting another output voltage of the flow rate controller in a state where an atmosphere in the flow rate controller is replaced at least with a processing gas used for the substrate process and each of the stop valves is closed, and storing said another output voltage as a second zero point shift in a storage unit;
• and
• a second zero point shift correction step of, when the substrate process is performed, detecting an output voltage of the flow rate controller as another first zero point shift in a state where the inside of the flow rate controller is vacuum exhausted by the vacuum exhaust unit and each of the stop valves is closed, correcting the set voltage to correspond to a flow rate of the processing gas used for the substrate process based on the second zero point shift stored in the storage unit and said another first zero point shift detected when the substrate process is performed, setting the corrected set voltage in the flow rate controller.