Method of forming integrated circuit having a magnetic tunnel junction device
AssigneesQimonda AG, Altis Semiconductor, SNC
InventorsFaiz Dahmani, Gill Yong Lee
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Abstract
A method for manufacturing an integrated circuit having a magnetic tunnel junction device is disclosed. The method includes depositing a bottom pinning structure above the bottom conductive structure. A first ferromagnetic structure is deposited above the bottom pinning structure in a chamber. A tunnel barrier structure is deposited above the first ferromagnetic layer structure in the chamber, and a second ferromagnetic structure is deposited above the tunnel barrier structure of the magnetic tunnel junction device in another chamber.
Claims48
A method for manufacturing an integrated circuit having a magnetic tunnel junction device, the method comprising:
- performing a pre-clean etch process of a carrier in a first chamber;
- depositing a bottom conductive layer structure above the carrier in a second chamber;
- depositing a bottom pinning layer structure above the bottom conductive layer structure in the second chamber;
- depositing a first ferromagnetic layer structure above the bottom pinning layer structure in a third chamber;
- depositing a tunnel barrier layer structure above the first ferromagnetic layer structure in the third chamber;
- depositing a second ferromagnetic layer structure above the tunnel barrier layer structure in the third chamber;
- and
- depositing a top conducting layer structure above the second ferromagnetic layer structure in the second chamber.
Dependencies are inferred from the claim text.