Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission

A composition, comprising:

• a fullerene;
• a functionalizing group disposed on at least a portion of a surface of the fullerene, wherein the functionalizing group comprises one or more hydroxide groups chemically bound to said surface portion of the fullerene;
• and
• a semiconducting material coating at least the portion of the surface of the fullerene that includes the functionalizing group, wherein the semiconductor material comprises at least one of ZnS, CdS, CdSe, GaAs, InP, GaS, TiO2, and Fe2S3 and wherein the semiconducting material coating on at least said surface portion of the fullerene has a thickness in a range of about 100 nm to about 5000 nm.

A composition, comprising,

• a fullerene;
• a functionalizing group disposed on at least a portion of a surface of the fullerene, wherein the functionalizing group comprises one or more hydroxide groups chemically bound to said surface portion of the fullerene;
• and
• a semiconducting material disposed on the portion of the surface of the fullerene that includes the functionalizing group, wherein the semiconductor material comprises at least one of ZnS, CdS, CdSe, GaAs, InP, GaS, TiO2, and Fe2S3 and wherein the semiconducting material coats all of the surface of the fullerene and has a thickness in a range of about 100 nm to about 5000 nm.