Heterostructure semiconductor nanowires and method for producing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsEun Joo Jang, Shin Ae Jun
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Abstract
Disclosed herein are heterostructure semiconductor nanowires. The heterostructure semiconductor nanowires comprise semiconductor nanocrystal seeds and semiconductor nanocrystal wires grown in a selected direction from the surface of the semiconductor nanocrystal seeds wherein the semiconductor nanocrystal seeds have a composition different from that of the semiconductor nanocrystal wires. Further disclosed is a method for producing the heterostructure semiconductor nanowires.
Claims7
A method for producing a nanowire initiated from a semiconductor nanocrystal, the method comprising the steps of (a) preparing a semiconductor nanocrystal seed, (b) adding the nanocrystal seed to a metal precursor solution of a nanocrystal wire, and (c) adding a non-metal precursor solution of the nanocrystal wire to the mixture obtained in step (b) to allow the precursors to react with each other, and forming the nanocrystal wire on the nanocrystal seed,
- wherein the concentration ratio of the nanocrystal seed to the precursors of the nanocrystal wire is in the range of 0.01:1 to 1:0.01,
- wherein a surfactant exists on the surface of the semiconductor nanocrystal seed and the semiconductor nanocrystal wire, and the surfactant is a carboxylic acid surfactant, and
- wherein the nanocrystal seed prepared in step (a) has a shape selected from the group consisting of platelet, spherical, ellipsoidal, cuboid, and a combination comprising at least one of the foregoing shapes.
Dependencies are inferred from the claim text.