Pressure control device for low pressure processing chamber
AssigneeHitachi High-Technologies Corporation
InventorsNaoyuki Kofuji, Hiroshi Akiyama, Masahiro Nagatani
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AssigneeHitachi High-Technologies Corporation
InventorsNaoyuki Kofuji, Hiroshi Akiyama, Masahiro Nagatani
Estimating the term…
A control method which quickly adjusts a plasma processing apparatus to a desired pressure regardless of gas type, gas flow rate or target pressure simply by optimizing constants. The plasma processing apparatus includes: gas supply means which supplies processing gas to a low pressure processing chamber; plasma generating means which supplies electromagnetic energy to the processing gas in the low pressure processing chamber and generates plasma; exhaust means which exhausts gas in the low pressure processing chamber; gas pressure measuring means which measures gas pressure in the low pressure processing chamber; exhaust speed adjusting means which adjusts exhaust speed of gas to be exhausted by the exhaust means; and an arithmetic and control unit calculates an exhaust speed to make the gas pressure measured by the pressure measuring means equal to a target value, and controls the exhaust speed adjusting means according to the calculation result.
A pressure control device for a plasma processing apparatus comprising:
A method of controlling a pressure in a processing chamber having a gas inlet arranged to inlet gas into the chamber, an exhaust valve arranged to exhaust gas from the chamber, and a pressure gauge arranged to measure a gas pressure in the chamber, the method comprising:
Dependencies are inferred from the claim text.