US 7,680,172 B2Granted

Laser diode device

AssigneeSony Corporation

InventorMasaru Kuramoto

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Abstract

A laser diode device capable of detecting laser light with a simple structure is provided. A laser diode device, includes a semiconductor layer formed through laminating a first conductive type layer, an active layer and a second conductive type layer in this order, the second conductive type layer including a striped current confinement structure in a top portion thereof, and a plurality of electrodes being formed on the second conductive type layer side of the semiconductor layer and being electrically connected to the second conductive type layer at predetermined intervals, wherein the semiconductor layer has a photoreceptor region in a region corresponding to an electrode (a first electrode) of the plurality of electrodes except for at least one, the photoreceptor region absorbing a part of the light emitted in the semiconductor layer to convert the part of the light into a current signal.

Claims6

Dependent claims

A laser diode device, comprising:

a semiconductor layer including an active layer, a first conductive type layer and a second conductive type layer;
grooves extending into said second conductive type layer, said active layer being between said first conductive type layer and said second conductive type layer;
a first electrode electrically connected to a ridge, said ridge being a portion of said second conductive type layer between said grooves;
a second electrode electrically connected to said second conductive type layer, a contact portion of said second electrode being within at least one of the grooves;
a high resistance region in said second conductive type layer, said high resistance region being between said at least one of the grooves and said active layer,
wherein said semiconductor layer has a photoreceptor region and a gain region, said high resistance region being between said photoreceptor region and said gain region,
wherein said contact portion is electrically connected to said photoreceptor region.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 11/519,951Filed 13 Sep 2006
Priority: JP 2005-26801015 Sep 2005
Published: US 2007/0071050 A129 Mar 2007
Granted: 16 Mar 2010
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H01S 5/026
Structural details or components not essential to laser action: monolithically integrated components, e.g. waveguides, monitoring photo-detectors,…
H01S 5/04256
Electrodes, e.g. characterised by the structure: characterised by the configuration
H01S 5/22
Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or…:…
H01S 5/0262
Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers: photo-diodes, e.g. transceiver devices, bidirectional…