Long wavelength vertical cavity surface emitting laser device and method of fabricating the same
AssigneeElectronics and Telecommunications Research Institute
InventorsMi-Ran Park, O-Kyun Kwon
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Abstract
Provided is a vertical cavity surface emitting device. The surface emitting device includes a lower mirror layer emitting light having a long wavelength, an active layer providing an optical gain, a tunnel junction layer for confining a current, and an upper mirror layer, which are sequentially stacked on a compound semiconductor substrate, wherein a heat release layer is formed on side surfaces of at least one of the active layer, the tunnel junction layer and the upper mirror layer by using etching process, and the heat release layer has greater thermal conductivity than at least one of the active layer, the tunnel junction layer and the upper mirror layer.
Claims14
A surface emitting device comprising a lower mirror layer emitting light having a long wavelength, an active layer providing an optical gain, a tunnel junction layer for reducing an absorption loss of free carrier, and an upper mirror layer, which are sequentially stacked on a compound semiconductor substrate,
- wherein an aperture region is formed on a side surface of at least one of the active layer, the tunnel junction layer and the upper mirror layer by using etching process, and
- a heat release layer having greater thermal conductivity than at least one of the active layer, the tunnel junction layer and the upper mirror layer is formed in the aperture region,
- wherein the heat release layer comprises a dielectric layer and a metal layer, wherein the dielectric layer is deposited on an aperture region and the metal layer is deposited on the dielectric layer formed on the side surface, and
- wherein the dielectric layer is formed to have a smaller thickness than the thickness of the aperture region by using atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD).
A surface emitting device comprising a lower mirror layer emitting light having a long wavelength, an active layer providing an optical gain, a tunnel junction layer for reducing an absorption loss of free carrier, and an upper mirror layer, which are sequentially stacked on a compound semiconductor substrate,
- wherein an aperture region is formed on a side surface of at least one of the active layer, the tunnel junction layer and the upper mirror layer by using etching process, and
- a heat release layer having greater thermal conductivity than at least one of the active layer, the tunnel junction layer and the upper mirror layer is formed in the aperture region,
- wherein the diameter of the tunnel junction layer is smaller than each of the diameters of the active layer and the upper mirror layer due to formation of the aperture region.
A surface emitting device comprising a lower mirror layer emitting light having a long wavelength, an active layer providing an optical gain, a tunnel junction layer for reducing an absorption loss of free carrier, and an upper mirror layer, which are sequentially stacked on a compound semiconductor substrate,
- wherein an aperture region is formed on a side surface of at least one of the active layer, the tunnel junction aver and the upper mirror layer by using etching process, and
- a heat release layer having greater thermal conductivity than at least one of the active layer, the tunnel junction layer and the upper mirror layer is formed in the aperture region,
- wherein the substrate is formed of InP, and the lower mirror layer, the active layer, the tunnel junction layer and the upper mirror layer comprises the same kind of material as the material of the substrate, and
- wherein the lower mirror layer comprises a pair of InAlGaAs/InAlAs layers, the active layer comprises a InAlGaAs-based multiple quantum well structure, and the upper mirror layer comprises a pair of InP/InAlAs layers.
Dependencies are inferred from the claim text.