Semiconductor memory device for simultaneously performing read access and write access
AssigneeUniversity-Industry Cooperation Group of Kyung Hee University
InventorSang Hoon Hong
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Abstract
Disclosed herein is a semiconductor memory device which can simultaneously perform a read access and a write access independently. The semiconductor memory device according to the present invention can access a plurality of data through the global sense amplifying unit and the global bit line, and enables the read controller and the write controller to independently control the global bit line and the bit line sense amplifying unit to be connected to each other to thereby perform the read access and the write access simultaneously.
Claims5
A semiconductor memory device including a unit cell block having a plurality of unit cells and a bit line sense amplifying unit for sensing and amplifying data accessed to the unit cell block, the semiconductor memory device comprising:
- a first global sense amplifying unit for sensing and amplifying a plurality of data for write access to the unit cell block and latching the sensed and amplified data;
- a second global sense amplifying unit for latching a plurality of data read-accessed in the unit cell block;
- a first global bit line for transmitting data between the first global sense amplifying unit and the bit line sense amplifying unit;
- a second global bit line for transmitting data between the second global sense amplifying unit and the bit line sense amplifying unit;
- a control unit for independently controlling a first connection between the bit line sense amplifying unit and the first global bit line and a second connection between the bit line sense amplifying unit and the second global bit line according to an access mode.
Dependencies are inferred from the claim text.