Integrated circuit having a drive circuit
AssigneeInfineon Technologies AG
InventorsRonald Kakoschke, Thomas Nirschl, Doris Schmitt-Landsiedel
Life of this patent
Estimating the term…
Abstract
An intergrated circuit having a drive circuit is disclosed. One embodiment provides an intergrated memory circuit arrangement with a drive circuit for an EEPROM. In one embodiment, the drive circuit contains tunnel field effect transistors and can be produced in particular on a small chip area.
Claims30
An integrated circuit having a memory comprising:
- a drive circuit having at least one drive transistor comprising a tunnel field effect transistor having an electrically conductive control electrode, isolated from a channel forming region by a dielectric;
- a first doped connection region arranged at one end of the channel forming region, the connection region being doped in accordance with a first doping type;
- and
- a second doped connection region arranged at another end of the channel forming region, the connection region being doped in accordance with a second doping type, different from the first doping type,
- wherein the drive circuit includes a bistable multivibrator electrically connected to a word line.
An integrated memory circuit arrangement, comprising:
- a multiplicity of memory cells which are arranged in matrix-type fashion in columns and rows and in each case contain at least one transistor or other memory element, comprising a plurality of word lines which in each case lead to memory cells of the same row, and comprising drive circuits which are arranged on the word lines and in each case contain a plurality of drive transistors;
- wherein at least one drive transistor is a tunnel field effect transistor having an electrically conductive control electrode, which is isolated from a channel forming region by a dielectric;
- wherein a first doped connection region is arranged at one end of the channel forming region of the tunnel field effect transistor, said connection region being doped in accordance with a first doping type;
- and wherein a second doped connection region is arranged at another end of the channel forming region of the tunnel field effect transistor, said connection region being doped in accordance with a second doping type, which differs from the first doping type.
A tunnel field effect transistor comprising:
- a gate length of less than 500 nanometers for the switching of voltages or for the isolation of voltages of greater than 5 volts.
The use of two tunnel field effect transistors in a switching element for bidirectional signal transmission or in a switching element which operates as an isolating circuit comprising:
- the two tunnel field effect transistors either have a common control electrode or
- wherein the two tunnel field effect transistors in each case have a dedicated control electrode which are electrically conductively interconnected;
- wherein the two tunnel field effect transistors either have a common first doped connection region or wherein the two tunnel field effect transistors in each case contain a first doped connection region which are electrically conductively interconnected, the first doped connection region being doped in accordance with a first doping type;
- and
- wherein the two tunnel field effect transistors each include a second doped connection region being doped in accordance with a second doping type different from the first doping type.
Dependencies are inferred from the claim text.