Semiconductor switching device
AssigneeAdvanced Micro Devices, Inc.
InventorHyun-Jin Cho
Life of this patent
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Abstract
A switching device and methods of making and operating the same are provided. In one aspect, a method of operating a switching device is provided that includes providing a MOS transistor that has a gate, a source region, a drain region and a body region. A bipolar transistor is provided that has a collector, a base and an emitter. The body region of the MOS transistor serves as the base of the bipolar transistor and the drain region of the MOS transistor serves as the collector of the bipolar transistor. Activation of the MOS transistor causes the bipolar transistor to turn on. The MOS transistor is activated to turn on the bipolar transistor and the bipolar transistor delivers current to the source region.
Claims11
A switching device, comprising:
- a MOS transistor having a gate, a source region, a drain region and a body region;
- a bipolar transistor having a collector, a base and an emitter;
- and
- wherein the body region of the MOS transistor serves as the base of the bipolar transistor and the drain region of the MOS transistor serves as the collector of the bipolar transistor, and wherein activation of the MOS transistor causes the bipolar transistor to turn on.
A storage cell, comprising:
- a MOS transistor having a gate, a source region, a drain region and a body region;
- a bipolar transistor having a collector, a base and an emitter;
- a storage structure electrically coupled to the drain region;
- and
- wherein the body region of the MOS transistor serves as the base of the bipolar transistor and the drain region of the MOS transistor serves as the collector of the bipolar transistor, and wherein activation of the MOS transistor causes the bipolar transistor to turn on.
Dependencies are inferred from the claim text.