Memory element array having switching elements including a gap of nanometer order
AssigneesFunai Electric Advanced Applied Technology Research Institute Inc., Funai Electric Co., Ltd.
InventorsShigeo Furuta, Yuichiro Masuda, Tsuyoshi Takahashi, Masatoshi Ono
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Abstract
Disclosed is a memory element array comprising a plurality of memory elements arranged in an array, wherein the memory elements are switching elements each including a gap of nanometer order in which a switching phenomenon of resistance is caused by applying a predetermined voltage between electrodes, and the memory element array is provided with tunnel elements respectively connected to the switching elements in series, each of the tunnel elements preventing generation of a sneak path current flowing to another switching element at a time of applying the predetermined voltage.
Claims3
A memory element array comprising a plurality of memory elements arranged in an array, wherein
- the memory elements are switching elements each including a gap of nanometer order in which a switching phenomenon of resistance is caused by applying a predetermined voltage between electrodes, and
- the memory element array is provided with tunnel elements respectively connected to the switching elements in series, each of the tunnel elements preventing generation of a sneak path current flowing to another switching element at a time of applying the predetermined voltage.
A memory element array comprising a plurality of memory elements arranged in an array, wherein
- the memory elements are switching elements each including a gap of nanometer order in which a switching phenomenon of resistance is caused by applying a predetermined voltage between electrodes,
- the memory element array is provided with tunnel elements respectively connected to the switching elements in series, each of the tunnel elements preventing generation of a sneak path current flowing to another switching element at a time of applying the predetermined voltage, and
- the switching elements and the tunnel elements are arranged to be aligned in a vertical direction, and to be connected with each other through conductive protection films respectively.
Dependencies are inferred from the claim text.