Flip chip quantum well modulator
AssigneeCubic Corporation
InventorsMahyar Dadkhah, Tony Maryfield, Thomas Davidson
Life of this patent
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Abstract
A quantum well modulator configured to absorb or transmit light depending on an applied voltage is provided according to various embodiments. The quantum well modulator may include a substrate, a p-type and n-type semiconductor layers as well as a quantum well layer, each of which are deposited above the substrate. The substrate may be configured to filter light incident thereon, wherein the substrate does not include a reflective surface. The flip-chip quantum well modulator may be configured to substantially absorb light received through the substrate when a first voltage is applied. The flip-chip quantum well modulator may be configured to substantially transmit light received through the substrate when a second voltage is applied.
Claims15
A flip-chip quantum well modulator configured to absorb or transmit light depending on an applied voltage, the quantum well modulator comprising:
- a substrate configured to filter light incident thereon, wherein the substrate does not include a reflective surface, wherein the filtered light is within a specific wavelength band;
- a p-type semiconductor layer deposited above the substrate;
- a quantum well layer deposited above the substrate;
- and
- an n-type semiconductor layer deposited above the substrate;
- wherein the flip-chip quantum well modulator is configured to substantially absorb light received through the substrate when a first voltage is applied;
- and
- wherein the flip-chip quantum well modulator is configured to substantially transmit light received through the substrate when a second voltage is applied.
A flip-chip quantum well modulator configured to absorb or transmit light depending on an applied voltage, the flip-chip quantum well modulator comprising:
- a substrate configured to filter light incident thereon, wherein the substrate does not include a reflective surface, wherein the filtered light is within a specific wavelength band;
- a p-type semiconductor layer deposited above the substrate;
- a quantum well layer deposited above the substrate;
- and
- an n-type semiconductor layer deposited above the substrate;
- wherein the flip-chip quantum well modulator is configured to substantially absorb light received through the substrate when a first voltage is applied;
- and
- wherein the flip-chip quantum well modulator is configured to substantially transmit light received through the substrate when a second voltage is applied.
Dependencies are inferred from the claim text.