Surface acoustic wave resonator, and surface acoustic wave filter
AssigneePanasonic Corporation
InventorsTsutomu Igaki, Kazunori Nishimura, Kazuo Ikeda, Ken Matsunami
Life of this patent
Estimating the term…
Loading patent…
AssigneePanasonic Corporation
InventorsTsutomu Igaki, Kazunori Nishimura, Kazuo Ikeda, Ken Matsunami
Estimating the term…
A surface acoustic wave resonator has a piezoelectric substrate (11), an IDT (13) formed of a plurality of electrode fingers (12) disposed on piezoelectric substrate (11), and reflectors (14) disposed near the opposite ends of IDT (13). The IDT (13) has a gradation region where the electrode finger pitch of the plurality of electrode fingers (12) at the opposite ends is different from the electrode finger pitch near the center of the IDT (13). In this gradation region, the electrode finger pitches are sequentially varied in the range from the electrode finger at the farthest end that is one end of the gradation region to the electrode finger lying at the other end of the gradation region. The electrode finger pitch of the electrode fingers at the farthest end that is one end of the gradation region is set to be 1 through 5% smaller than the electrode finger pitch near the center of the IDT (13).
A surface acoustic wave resonator comprising:
A surface acoustic wave filter comprising:
Dependencies are inferred from the claim text.
Drawings are temporarily unavailable. Open the PDF at USPTO
From the US filing history. Foreign family members aren’t listed.
For networks using surface acoustic waves: transducers of particular shape or position
Transducers whereby only the last fingers have different characteristics with respect to the other fingers, e.g. different shape, thickness or…:…
Coupled resonator filters: ladder SAW filters
Impedance networks
About 9 months of term left · ends 5 Aug 2027 (estimated)
1. Field of the Invention
The present invention relates to a surface acoustic wave resonator and surface acoustic wave filter for use in a portable phone.
2. Description of the Related Art
FIG. 1 is a plan view of a surface acoustic wave resonator in accordance with a first exemplary embodiment of the present invention.
FIG. 2 is an enlarged view of the left end of an IDT shown in FIG. 1.
FIG. 3 is a diagram showing a simulation result of the reflection characteristic of the resonator of practical example 1, in the surface acoustic wave resonator of the first exemplary embodiment.
Embodiments of the present invention are described in detail hereinafter with reference to the accompanying drawings. The same elements are denoted with the same reference marks, and the descriptions of those elements are omitted. The following drawings are schematic, and do not accurately represent the number of electrode fingers and a pitch.
FIG. 1 is a plan view of surface acoustic wave resonator 10 in accordance with a first exemplary embodiment of the present invention. Surface acoustic wave resonator 10 has the following elements:
IDT 13 including a plurality of electrode fingers 12 formed on the surface of piezoelectric substrate 11 made of 39° Y cut X propagation lithium tantalate (LiTaO3); and