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US 7,679,424 B2Granted
Semiconductor device with pad switch
AssigneeFujitsu Microelectronics Limited
InventorAtsushi Takeuchi
Life of this patent
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Abstract
A semiconductor device includes a pad, an internal power supply line, a pad switch including a MOS transistor to provide an electrically connectable coupling between the internal power supply line and the pad by use of a source-drain channel thereof, and a control circuit configured to control an electrical connection with respect to at least one of a gate node and a back-gate node of the MOS transistor, wherein the control circuit is configured such that at least one of the gate node and the back-gate node is electrically connectable to the pad.
Claims13
A semiconductor device, comprising:
- a pad;
- an internal power supply line;
- a pad switch including a MOS transistor to provide an electrically connectable coupling between the internal power supply line and the pad by use of a source-drain channel thereof;
- and
- a control circuit configured to control an electrical connection with respect to at least one of a gate node and a back-gate node of the MOS transistor,
- wherein the control circuit is configured such that the gate node and the back-gate node are electrically connectable to the pad,
- wherein the gate couples to a first potential and the back-gate couples to the pad when the MOS transistor becomes conductive, and the gate and the back gate couple to a second potential, which is different from the first potential, when the MOS transistor becomes non-conductive.
4 more elements
Dependencies are inferred from the claim text.