Methods of forming thermoelectric devices using islands of thermoelectric material and related structures

A method of forming a thermoelectric device, the method comprising:

• forming a first plurality of conductive metal traces;
• bonding a first plurality of thermoelectric semiconductor elements to the first plurality of conductive metal traces, wherein the first plurality of thermoelectric semiconductor elements have a first semiconductor conductivity type;
• bonding a second plurality of thermoelectric semiconductor elements to the first plurality of conductive metal traces, wherein the second plurality of thermoelectric semiconductor elements have a second semiconductor conductivity type opposite the first semiconductor conductivity type;
• and
• providing a second plurality of conductive metal traces on the first and second pluralities of thermoelectric semiconductor elements so that the first and second pluralities of thermoelectric semiconductor elements are between the first and second pluralities of conductive metal traces, wherein surfaces of the second plurality of conductive metal traces opposite the first and second pluralities of thermoelectric semiconductor elements are free of layers having a thickness greater than about 100 micrometers and spanning multiple ones of the second plurality of conductive metal traces wherein first current paths are defined through each of the first plurality of thermoelectric semiconductor elements between respective conductive metal traces of the first and second pluralities of conductive metal traces with the first current paths being free of the second semiconductor conductivity type, and wherein second current paths are defined through each of the second plurality of thermoelectric semiconductor elements between respective conductive metal traces of the first and second pluralities of conducive metal traces with the second current paths being free of the first semiconductor conductivity type wherein surfaces of the first plurality of conductive metal traces opposite the first and second pluralities of thermoelectric semiconductor elements are free of layers having a thickness greater than about 100 micrometers and spanning multiple ones of the first plurality of conductive metal traces.