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US 7,679,197 B2Granted
Power semiconductor device and method for producing it
AssigneeInfineon Technologies AG
InventorRalf Otremba
Life of this patent
Estimating the term…
Abstract
A power semiconductor device (1; 37) has a leadframe (4), at least one vertical power semiconductor component (2) and at least one further electronic device (3) which is arranged on the power semiconductor component (2). The chip carrier (5) of the leadframe (4) has at least two separate parts (7, 8) on which the power semiconductor component (2) is arranged. The power semiconductor component (2) is embodied such that the lower surface (28) of the first part (7) of the chip carrier (5) provides a ground contact area (36) of the power semiconductor component (2).
Claims23
A power semiconductor device, comprising:
- a leadframe comprising a chip carrier and a plurality of leads comprising a first lead and a second lead, the chip carrier comprising at least two separate parts,
- a vertical power semiconductor component having a first side and a second side, at least one first contact area and at least one control contact area being arranged on the first side, and a second contact area being arranged on the second side,
- the first contact area being arranged on a first part of the chip carrier and being electrically connected to the first part of the chip carrier, and the control contact area being arranged on a second part of the chip carrier and being electrically connected to the second part of the chip carrier,
- a plastic housing composition, which embeds at least the power semiconductor component and the upper surface of the chip carrier and leaves free at least a lower surface of the first part of the chip carrier, the plastic housing composition comprising a lower outer surface which together with the lower surface of the first part of the chip carrier forms a common outer surface of the power device,
- wherein at least one further electronic device is arranged on the second contact area of the vertical power semiconductor component, and the lower surface of the first part of the chip carrier provides a ground contact area of the power semiconductor device, and
- wherein the first lead projects from the first part of the chip carrier and the second lead projects from the second part of the chip carrier.
3 more elements
A power semiconductor device, comprising:
- a leadframe comprising a chip carrier, a first lead, and a second lead, wherein the chip carrier comprises a first part and a second part separate from the first part, the first lead projects from the first part of the chip carrier, and the second lead projects from the second part of the chip carrier;
- a ground contact area of the power semiconductor device disposed on a surface of the first part of the chip carrier;
- a vertical power semiconductor component having a first side and a second side, at least one first contact area and at least one control contact area disposed on the first side, and a second contact area disposed on the second side, wherein the first contact area is disposed on and electrically connected to the first part of the chip carrier, and the control contact area is disposed on and electrically connected to the second part of the chip carrier;
- an electronic device is disposed on the second contact area of the vertical power semiconductor component;
- and
- a housing, wherein the power semiconductor component, a portion of the first part of the chip carrier, and a portion of the second part of the chip carrier are embedded in the housing, and said surface of the first part of the chip carrier and a surface of the second part of the chip carrier are each exposed to a region outside the housing.
3 more elements
A power semiconductor device, comprising:
- a leadframe comprising a chip carrier and a plurality of leads comprising a first lead and a second lead, the chip carrier comprising at least two separate parts;
- a vertical power semiconductor component having a first side and a second side, at least one first contact area and at least one control contact area being arranged on the first side, and a second contact area being arranged on the second side, the vertical power semiconductor component being either a MOSFET or an IGBT, wherein the first contact area is arranged on a first part of the chip carrier and being electrically connected to the first part of the chip carrier, and the control contact area being arranged on a second part of the chip carrier and being electrically connected to the second part of the chip carrier;
- and
- a plastic housing composition, which embeds at least the power semiconductor component and the upper surface of the chip carrier and leaves free at least a lower surface of the first part of the chip carrier, the plastic housing composition comprising a lower outer surface which together with the lower surface of the first part of the chip carrier forms a common outer surface of the power device,
- wherein a freewheeling vertical diode is electrically connected in parallel with the power semiconductor component, and electrically connected to the second contact area of the vertical power semiconductor component via an electrically conductive layer, and wherein the lower surface of the first part of the chip carrier provides a ground contact area of the power semiconductor device, and
- wherein the first lead projects from the first part of the chip carrier and the second lead projects from the second part of the chip carrier.
3 more elements
Dependencies are inferred from the claim text.