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US 7,679,191 B2Granted
Polysilicon film with increased roughness
AssigneeNEC Electronics Corporation
InventorKouji Nakajima
Life of this patent
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Abstract
The semiconductor device, in which a flaking of a layer or an element is prevented, is provided. A bonding pad section 13 of a semiconductor device 1 includes a polysilicon film 131, a barrier metal film 133 provided on the polysilicon film 131 and a metallic electrode 134 provided on the barrier metal film 133. The surface roughness of the surface of the polysilicon film 131 in the side of the barrier metal film 133 is equal to or larger than 3 nm. Further, the polysilicon film 131 contains substantially no phosphorus.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a gate oxide film formed on a first region of said substrate;
- a gate electrode including a first polysilicon film contacting said gate oxide film,
- a field oxide film formed on a second region of said semiconductor substrate;
- and
- a bonding pad section formed on said field oxide film,
- wherein said bonding pad section includes:
- a second polysilicon film provided on said field oxide film, the second polysilicon film being of a material different from the first polysilicon film;
- an interlayer insulating film provided on said second polysilicon film, a contact hole exposing a part of said second polysilicon film therefrom being provided in said interlayer insulating film;
- a barrier metal film provided on said interlayer insulating film and said polysilicon film extending through said contact hole;
- and
- a metallic electrode provided on said barrier metal film, and
- wherein a surface roughness of a surface of said second polysilicon film in a side of said barrier metal film is equal to or larger than 3 nm.
10 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a gate oxide film formed on a first region of said substrate;
- a gate electrode including a first polysilicon film contacting said gate oxide film,
- a field oxide film formed on a second region of said semiconductor substrate;
- and
- a bonding pad section formed on said field oxide film,
- wherein said bonding pad section includes:
- a second polysilicon film provided on said field oxide film, the second polysilicon film being of a material different from the first polysilicon film;
- an interlayer insulating film provided on said second polysilicon film, a contact hole exposing a part of said second polysilicon film therefrom being provided in said interlayer insulating film;
- a barrier metal film provided on said interlayer insulating film and said polysilicon film extending through said contact hole;
- and
- a metallic electrode provided on said barrier metal film, and
- wherein a surface roughness of a surface of said second polysilicon film in a side of said barrier metal film is equal to or larger than 3 nm, whereby the surface roughness of larger than 3 nm promotes adhesion.
10 more elements
Dependencies are inferred from the claim text.