Semiconductor device and memory card using the same

A semiconductor device, comprising:

• a circuit board including a first main surface having a first wiring network formed thereon, a second main surface opposite the first main surface having a second wiring network formed thereon, and a curved portion provided in at least one side of an external shape thereof;
• an external connecting terminal formed in a region except a region where the first wiring network is formed on the first main surface of the circuit board;
• a semiconductor element, mounted on the second main surface of the circuit board, having electrode pads;
• and
• bonding wires electrically connecting the second wiring network and the electrode pads of the semiconductor element,
• wherein a distance from the side including the curved portion of the circuit board to the first wiring network is larger than a distance from at least one of the other sides of the circuit board to the first wiring network, and a distance from the side including the curved portion of the circuit board to the second wiring network is larger than a distance from at least one of the other sides of the circuit board to the second wiring network.

A memory card, comprising:

• a circuit board including a first main surface having a first wiring network formed thereon, a second main surface opposite the first main surface having a second wiring network formed thereon, and a curved portion provided in at least one side of an external shape thereof;
• an external connecting terminal formed in a region except a region where the first wiring network is formed on the first main surface of the circuit board;
• an insulating layer formed on the first main surface of the circuit board to cover the first wiring network;
• a semiconductor memory elements mounted on the second main surface of the circuit board, having electrode pads;
• bonding wires electrically connecting the second wiring network and the electrode pads of the semiconductor memory element;
• and
• a sealing resin layer formed on the second main surface of the circuit board to seal the semiconductor memory element,
• wherein a distance from the side including the curved portion of the circuit board to the first wiring network is larger than a distance from at least one of the other sides of the circuit board to the first wiring network, and a distance from the side including the curved portion of the circuit board to the second wiring network is larger than a distance from at least one of the other sides of the circuit board to the second wiring network.