High brightness light emitting diode with a bidirectionally angled substrate

A light emitting diode comprising:

• a (100) substrate having a crystal orientation such that a plane of the substrate is inclined toward a first and a second direction simultaneously;
• a first cladding layer formed with a semiconductor material of a first conductive type on the (100) substrate;
• an active layer formed on the first cladding layer;
• and
• a second cladding layer formed with a semiconductor material of a second conductive type on the active layer,
• wherein concavo-convexes are formed on the interfaces of the first cladding layer, the second cladding layer, and the active layer;
• and
• wherein the (100) substrate is a III-V or a IV-IV group semiconductor substrate;
• and
• wherein the (100) substrate has a crystal orientation such that a (100) plane of the (100) substrate is inclined 2 to 20° toward the [0-1-1] direction and 1 to 8° toward the [0-11] direction.