Phase-change memory element
AssigneesIndustrial Technology Research Institute, Powerchip Semiconductor Corp., Nanya Technology Corporation, ProMOS Technologies Inc., Winbond Electronics Corp.
InventorsFrederick T Chen, Ming-Jinn Tsai
Life of this patent
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Abstract
A phase-change memory element for reducing heat loss is disclosed. The phase-change memory element comprises a composite layer, wherein the composite layer comprises a dielectric material and a low thermal conductivity material. A via hole is formed within the composite layer. A phase-change material occupies at least one portion of the via hole. The composite layer comprises alternating layers or a mixture of the dielectric material and the low thermal conductivity material.
Claims21
A phase-change memory element, comprising:
- a composite layer comprising a plurality of alternating layers of dielectric material and low thermal conductivity material;
- a via hole within the composite layer;
- and
- a phase-change material filled into the via hole and having a vertical side contacting each layer of the alternating layers.
A phase-change memory element, comprising:
- a composite layer comprising alternating concentric annular layers of dielectric material and low thermal conductivity material;
- a via hole within the composite layer;
- and
- a phase-change material occupying at least one portion of the via hole,
- wherein the alternating concentric annular layers surround the phase-change material.
A phase-change memory element, comprising:
- at least one composite layer comprising a mixture of a dielectric material and a low thermal conductivity material;
- a via hole within the composite layer;
- and
- a phase-change material filling into the via hole.
Dependencies are inferred from the claim text.