Solid state imaging device and solid state imaging element

A solid state imaging device comprising:

• a plurality of kinds of light receiving sections for photoelectrically converting incident light to generate charge;
• a transmission section including a MOS transistor for reading out the charge and an amplifier for amplifying the read out charge, which are provided in each of the light receiving sections, so as to output the amplified charge as a first signal group from the plurality of kinds of light receiving sections;
• and
• a signal processing unit for generating a second signal group of a predetermined color system from the first signal group,
• wherein each of the plurality of kinds of light receiving sections comprises:
• a first semiconductor layer of a first conduction type having a first portion diffused from a substrate surface to a first depth in a semiconductor substrate;
• a second semiconductor layer of a second conduction type having (i) a PN junction-forming portion which is in contact with the first portion of the first semiconductor layer at the first depth, and which is diffused from the first depth to a second depth greater than the first depth, and further which forms a PN junction of a photodiode at the second depth in the semiconductor substrate, and (ii) a charge output portion diffused from the PN junction to the substrate surface and coupled by circuit coupling to the MOS transistor for outputting the charge to the transmission section;
• and
• a third semiconductor layer of the first conduction type for forming the PN junction at the second depth with the PN junction-forming portion of the second semiconductor layer,
• wherein the first semiconductor layer has a higher impurity concentration that the third semiconductor layer, and
• wherein the plurality of kinds of light receiving sections are different in the first depth and the second depth in the semiconductor substrate.

A solid state imaging element comprising a plurality of kinds of light receiving sections for photoelectrically converting incident light to generate charge, each of the light receiving sections comprising:

• a first semiconductor layer of a first conduction type having a first portion diffused from a substrate surface to a first depth in a semiconductor substrate;
• a second semiconductor layer of a second conduction type having a PN junction-forming portion which is in contact with the first portion of the first semiconductor layer at the first depth, and which is diffused from the first depth to a second depth greater than the first depth, and further which forms a PN junction of a photodiode at the second depth in the semiconductor substrate;
• and
• a third semiconductor layer of the first conduction type for forming the PN junction at the second depth with the PN junction-forming portion of the second semiconductor layer,
• wherein the first semiconductor layer has a higher impurity concentration that the third semiconductor layer, and
• wherein the plurality of kinds of light receiving sections are different in the first depth and the second depth in the semiconductor substrate.