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US 7,679,158 B2Granted
Radiation image detector
AssigneeFUJIFILM Corporation
InventorShinji Imai
Life of this patent
Estimating the term…
Abstract
A thermal deformation preventing layer is located between a recording photoconductive layer, which contains a-Se as a principal constituent, and a crystallization preventing layer, which is constituted of an a-Se layer containing at least one kind of element selected from the group consisting of As, Sb, and Bi. The thermal deformation preventing layer is constituted of an a-Se layer containing at least one kind of specific substance selected from the group consisting of a metal fluoride, a metal oxide, SiOx, and GeOx, where x represents a number satisfying 0.5≦x≦1.5.
Claims8
A radiation image detector, comprising:
- i) a base plate,
- ii) a reference electrode constituted of a plurality of electrodes,
- iii) a recording photoconductive layer, which contains a-Se as a principal constituent,
- iv) a crystallization preventing layer, which is constituted of an a-Se layer containing at least one kind of element selected from the group consisting of As, Sb, and Bi, and
- v) a bias electrode,
- the reference electrode, the recording photoconductive layer, the crystallization preventing layer, and the bias electrode being overlaid in this order on the base plate,
- a thermal deformation preventing layer being located between the recording photoconductive layer and the crystallization preventing layer,
- the thermal deformation preventing layer being constituted of an a-Se layer containing at least one kind of specific substance selected from the group consisting of a metal fluoride, a metal oxide, SiOx, and GeOx, where x represents a number satisfying 0.5≦x≦1.5.
5 more elements
Dependencies are inferred from the claim text.