Back to results
US 7,679,157 B2Granted
Image sensor and fabrication method thereof
AssigneePowerchip Semiconductor Corp.
InventorTakashi Miida
Life of this patent
Estimating the term…
Abstract
An image sensor has a substrate, a dielectric layer positioned on the substrate, a pixel array including a plurality of pixels defined on the substrate, a shield electrode positioned between any two adjacent pixel electrodes of the pixels, a photo conductive layer positioned on the shield electrode and the pixel electrodes, and a transparent conductive layer covering the photo conductive layer.
Claims13
An image sensor comprising:
- a substrate;
- a pixel array comprising a plurality of pixels defined on the substrate, each of the pixels comprising:
- a pixel circuit formed on the substrate;
- and
- a pixel electrode positioned on the pixel circuit and electrically connected to the pixel circuit;
- a shield electrode formed on a dielectric layer and positioned in a gap region between any two adjacent pixel electrodes of said pixels, wherein the pixel electrodes and the shield electrode do not overlap with each other;
- an insulating layer disposed directly above the shield electrode, the portion of the dielectric layer in the gap region, and edge portions of each of the pixel electrodes;
- a photo conductive layer positioned on the shield electrode and the pixel electrodes;
- and
- a transparent conductive layer covering the photo conductive layer.
7 more elements
Dependencies are inferred from the claim text.