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US 7,679,155 B2Granted
Multiple magneto-resistance devices based on doped magnesium oxide
AssigneeVNK Innovation AB
InventorVladislav Korenivski
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AssigneeVNK Innovation AB
InventorVladislav Korenivski
Estimating the term…
The present invention provides a low resistance high magnetoresistance (MR) device comprised of a junction of two magnetic elements separated by a magnesium oxide (MgO) layer doped with such metals as Al and Li. Such device can be used as a sensor of magnetic field in magnetic recording or as a storage element in magnetic random access memory (MRAM). The invention provides a high-MR device possessing a diode function, comprised of a double junction of two outer magnetic elements separated by two MgO insulating layer and a center MgO layer doped with such metals as Al and Li. Such device provides design advantages when used as a storage element in MRAM. The invention with MR wherein a gate electrode is placed in electrical or physical contact to the center layer of the double tunnel junction.
A magnetic junction device comprising two magnetic layers of different anisotropy, the two layers requiring a different amount of externally applied magnetic field or intrinsic spin-current-induced torque for switching their relative magnetic orientation, characterized by a center layer of doped MgO.
A method of producing a magnetic junction device comprising two magnetic layers of different anisotropy, the two layers requiring a different amount of externally applied magnetic field or intrinsic spin-current induced torque for switching their relative magnetic orientation, characterized by a sequential deposition of the first magnetic layer, a center layer of doped MgO, and a second magnetic layer.
Dependencies are inferred from the claim text.