Method for manufacturing a semiconductor component and a semiconductor component, in particular a diaphragm sensor

A semiconductor component, comprising:

• a substrate made of semiconductor material including a diaphragm and a cavity located underneath the diaphragm for forming a semiconductor component structure, the diaphragm including a porous layer of semiconductor material wherein a degree of porosity of the layer varies in at least one of a lateral and a vertical direction,
• wherein in an edge region of the diaphragm, the layer is mesoporous;
• wherein the layer includes at least one region of non-porous semiconductor material, whose thickness is greater than a thickness of a region of the diaphragm, wherein the semiconductor component is diaphragm sensor.

A semiconductor component, comprising:

• a substrate made of semiconductor material including a diaphragm and a cavity located underneath the diaphragm for forming a semiconductor component structure, the diaphragm including a porous layer of semiconductor material wherein a degree of porosity of the layer varies in at least one of a lateral and a vertical direction,
• wherein in a central region of the diaphragm, the layer is mesoporous or macroporous;
• wherein the layer includes at least one region of non-porous semiconductor material, whose thickness is greater than a thickness of a region of the diaphragm, wherein the semiconductor component is diaphragm sensor.