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AssigneeFujitsu Microelectronics Limited
InventorsMasahiro Fukuda, Yosuke Shimamune, Masaaki Koizuka, Katsuaki Ookoshi
Estimating the term…
A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulating layer formed over sides of the gate electrode and containing a halogen element. With this semiconductor device, a silicon nitride film which contains the halogen element is formed over the sides of the gate electrode when an SiGe layer is formed over the Si substrate. Therefore, the SiGe layer epitaxial-grows over the Si substrate with high selectivity. As a result, an OFF-state leakage current which flows between, for example, the gate electrode and source/drain regions is suppressed and a manufacturing process suitable for actual mass production is established.
A semiconductor device comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Insulated-gate field-effect transistors [IGFET]: having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
Manufacture or treatment: forming source or drain recesses by etching e.g. recessing by etching and then refilling
Of semiconductor materials: using chemical vapour deposition [CVD]
Using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials: characterised by the…
Term ended 22 Aug 2026 (estimated)
(1) Field of the Invention
This invention relates to a semiconductor device and a method for fabricating a semiconductor device and, more particularly, to a semiconductor device in which a semiconductor can be made to epitaxial-grow with high selectivity and a semiconductor device fabrication method by which a semiconductor is made to epitaxial-grow with high selectivity.
(2) Description of the Related Art
FIG. 1 is a sectional view showing an important part of a semiconductor device for which selective epitaxial growth is used (part 1).
FIG. 2 is a sectional view showing an important part of a semiconductor device for which the selective epitaxial growth is used (part 2).
FIG. 3 is an example of a flow chart of fabricating a semiconductor device by using the selective epitaxial growth.
Embodiments of the present invention will now be described in detail with reference to the drawings.
A semiconductor device fabricated by using a selective epitaxial growth method will be described first. A recessed source/drain MOSFET will be taken as an example and its structure will be described.
A semiconductor device according to a first embodiment of the present invention will be described first.