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US 7,679,140 B2Granted
Structure of strained silicon on insulator and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-soo Park, Wenxu Xianyu, Takashi Noguchi
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Abstract
Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2 layer formed on the insulating substrate, and a strained silicon layer formed on the SiO2 layer.
Claims5
A strained SOI structure comprising:
- an insulating substrate selected from the group consisting of a glass substrate and a plastic substrate, wherein the insulating substrate is surrounded by a protective layer which is formed of AlN and protects the insulating substrate from etching;
- a SiO2 layer formed on the protective layer;
- and
- a strained silicon layer formed on the SiO2 layer.
1 more element
Dependencies are inferred from the claim text.