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US 7,679,134 B1Granted
FinFET device with multiple fin structures
AssigneeGlobalfoundries Inc.
InventorsMatthew S. Buynoski, Judy Xilin An, Haihong Wang, Bin Yu
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Abstract
A semiconductor device includes a group of fin structures. The group of fin structures includes a conductive material and is formed by growing the conductive material in an opening of an oxide layer. The semiconductor device further includes a source region formed at one end of the group of fin structures, a drain region formed at an opposite end of the group of fin structures, and at least one gate.
Claims14
A semiconductor structure comprising:
- an oxide layer;
- and
- a plurality of fin structures, the plurality of fin structures comprising a conductive material and being formed adjacent sidewalls of an opening of the oxide layer.
A semiconductor structure comprising:
- an oxide layer;
- and
- silicon fin structures formed adjacent sidewalls of an opening of the oxide layer.
Dependencies are inferred from the claim text.