Back-gated semiconductor device with a storage layer and methods for forming thereof

Abstract

A method of making a semiconductor device includes providing a first wafer and providing a second wafer having a first side and a second side, the second wafer including a semiconductor substrate, a storage layer, and a layer of gate material. The storage layer may be located between the semiconductor structure and the layer of the gate material and the storage layer may be located closer to the first side of the second wafer than the semiconductor structure. The method further includes boding the first side of the second wafer to the first wafer. The method further includes removing a first portion of the semiconductor structure to leave a layer of the semiconductor structure after the bonding. The method further includes forming a transistor having a channel region, wherein at least a portion of the channel region is formed from the layer of the semiconductor structure.

Dependencies are inferred from the claim text.