Analog capacitor and method of manufacturing the same

#This application claims priority from Korean Patent Application Nos. 10-2004-0059357 and 10-2005-0010090 filed on Jul. 28, 2004 and Feb. 3, 2005, respectively, in the Korean Intellectual Property Office, the contents of which are incorporated herein in their entirety by reference.

#1. Field of the Invention

#The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to an analog capacitor and a method of manufacturing the same.

#The foregoing and other objects, features and advantages of the invention will be apparent from the more particular description of preferred aspects of the invention, as illustrated in the accompanying drawings in which like reference characters refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention. In the drawings, the thickness of layers and regions are exaggerated for clarity.

#FIG. 1 is a schematic cross-sectional view showing a structure of an analog capacitor according to one embodiment of the present invention.

#FIGS. 2 through 4 are graphs of measured data showing changes in capacitance of the analog capacitor according to changes in voltage applied to the analog capacitor; wherein FIG. 2 is a graph of measured data showing changes in capacitance of an analog capacitor having a structure of lower electrode-HfO2-upper electrode according to changes in voltage applied to the analog capacitor; FIG. 3 is a graph of measured data showing changes in capacitance of an analog capacitor having a structure of lower electrode-HfOxNy-upper electrode according to changes in voltage applied to the analog capacitor; and FIG. 4 is a graph of measured data showing changes in capacitance of an analog capacitor having a structure of lower electrode-HfOxNy—HfO2-upper electrode according to changes in voltage applied to the analog capacitor.

#In the present invention, an analog capacitor having a polysilicon-insulator-polysilicon (PIP) structure, a metal-insulator-silicon (MIS) structure or a metal-insulator-metal (MIM) structure, or the like is used. The present invention is described using an analog capacitor having an MIM structure for convenience of description.

#Further, the analog capacitor used in the present invention can be used in an advanced analog CMOS technology, particularly, an analog-to-digital converter (ADC) or a switched capacitor filter, a mixed-signal device, an RF device, or the like. The analog capacitor can be formed in the form of heavily doped silicon-insulator-silicon (SIS) to ensure high accuracy.

#Hereinafter, an analog capacitor according to one embodiment of the present invention and a method of manufacturing the same are described with reference to FIGS. 1 through 4.