CMOS image sensor and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-Hoon Park, Sang-Il Jung
Life of this patent
Estimating the term…
Abstract
A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.
Claims18
A CMOS image sensor, comprising:
- a device isolation pattern formed in a substrate to define a diode region and an active region;
- a photodiode formed in the diode region;
- a transfer gate formed adjoining the photodiode on the active region;
- a reset gate and a selection gate serially formed apart from each other on the active region separated from the transfer gate by a predetermined distance;
- a floating diffusion layer formed in the active region between the transfer gate and the reset gate;
- and
- a blocking layer that covers at least the floating diffusion layer and wherein the blocking layer does not cover the active region disposed between a sidewall of the selection gate and a sidewall of the reset gate, which face each other and wherein the blocking layer does not cover the active region located adjacent to an opposing sidewall of the selection gate.
A CMOS image sensor, comprising:
- a device isolation pattern formed in a substrate to define a diode region and an active region;
- a photodiode formed in the diode region;
- a transfer gate formed adjoining the photodiode on the active region;
- a reset gate and a selection gate serially formed apart from each other on the active region separated from the transfer gate by a predetermined distance;
- a floating diffusion layer formed in the active region between the transfer gate and the reset gate;
- and
- a patterned blocking layer that covers the photodiode and the floating diffusion layer and wherein the patterned blocking layer does not cover the active region disposed between a sidewall of the selection gate and a sidewall of the reset gate, which face each other and wherein the patterned blocking layer does not cover the active region located adjacent to an opposing sidewall of the selection gate.
A CMOS image sensor, comprising:
- a device isolation pattern formed in a substrate to define a diode region and an active region;
- a photodiode formed in the diode region;
- a transfer gate formed adjoining the photodiode on the active region;
- a reset gate and a selection gate serially formed apart from each other on the active region separated from the transfer gate by a predetermined distance;
- a floating diffusion layer formed in the active region between the transfer gate and the reset gate;
- and
- a blocking layer that covers the photodiode, the transfer gate, the floating diffusion layer, and at least a portion of the reset gate adjacent the floating diffusion layer and wherein the blocking layer does not cover the active region disposed between a sidewall of the selection gate and a sidewall of the reset gate, which face each other and wherein the blocking layer does not cover the active region located adjacent to an opposing sidewall of the selection gate.
Dependencies are inferred from the claim text.