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US 7,679,111 B2Granted
Termination structure for a power semiconductor device
AssigneeInternational Rectifier Corporation
InventorsJianjun Cao, Nazanin Amani, Daniel M. Kinzer
Life of this patent
Estimating the term…
Abstract
A power semiconductor device having a termination structure that includes a polysilicon field plate, a metallic field plate, and a polysilicon equipotential ring.
Claims20
A power semiconductor device comprising:
- a semiconductor body that includes an active region, said active region including a PN junction;
- and a termination region disposed around said active region, said termination region including, a field insulation body formed over said semiconductor body;
- a polysilicon field plate formed over said field insulation body and spanning continuously between an inner boundary and an outer boundary, said inner boundary being closer to said active region than said outer boundary, a region of said polysilicon field plate that is closest to said active region and said outer boundary being a region of said polysilicon field plate that is farthest from said active region;
- an insulation body disposed over said polysilicon field plate;
- a metallic field plate through said insulation body and electrically connected with said polysilicon field plate through said insulation body;
- wherein said metallic field plate is spread over said insulation body and extends beyond said outer boundary of said polysilicon field plate.
3 more elements
A power semiconductor device comprising:
- a semiconductor body that includes an active region, said active region including a PN junction;
- and a termination region disposed around said active region, said termination region including, a field insulation body formed over said semiconductor body;
- a polysilicon field plate formed over said field insulation body spanning continuously between an inner boundary and an outer boundary, said inner boundary being closer to said active region than said outer boundary, said inner boundary being a region of said polysilicon field plate that is closest to said active region and said outer boundary being a region of said polysilicon field plate that is farthest from said active region;
- an insulation body disposed over said polysilicon field plate;
- a metallic field plate disposed over said insulation body and electrically connected with said polysilicon field plate through said insulation body;
- an equipotential ring, wherein said equipotential ring is comprised of polysilicon and disposed inside an insulated trench which extends into said semiconductor body.
3 more elements
A power semiconductor device comprising:
- a semiconductor body that includes an active region, said active region including a PN junction;
- and a termination region disposed around said active region, said termination region including, a field insulation body formed over said semiconductor body;
- a polysilicon field plate formed over said field insulation body and spanning continuously between an inner boundary and an outer boundary, said inner boundary being closer to said active region than said outer boundary, said inner boundary being a region of said polysilicon field plate that is closest to said active region and said outer boundary being a region of said polysilicon field plate that is farthest from said active region;
- an insulation body disposed over said polysilicon field plate;
- a metallic field plate disposed over said insulation body and electrically connected with said polysilicon field plate through said insulation body;
- wherein said metallic field plate does not completely cover said insulation body and extends beyond said outer boundary of said polysilicon field plate.
3 more elements
Dependencies are inferred from the claim text.