Memory device that utilizes organic layer with a compound that can photoisomerize between conductive layers; at least one of which is light transmitting

A memory device comprising:

• a memory element including a first conductive layer, an organic compound layer including conductive particles dispersed therein, on the first conductive layer, and a second conductive layer over the organic compound layer,
• wherein an organic compound included in the organic compound layer has a site that can photoisomerize,
• wherein at least one of the first conductive layer and the second conductive layer has a light transmitting property, and
• wherein a portion of the organic compound layer is irradiated with light, a periphery of the irradiated portion is isomerized and becomes a projecting portion, and the second conductive layer comes into contact with the first conductive layer through the projecting portion.

A memory device comprising:

• a memory cell array including memory elements arranged in a matrix form;
• and
• a reading circuit,
• wherein each of the memory elements includes a first conductive layer, an organic compound layer including conductive particles dispersed therein, on the first conductive layer, and a second conductive layer having a light transmitting property, over the organic compound layer,
• wherein an organic compound included in the organic compound layer has a site that can photoisomerize, and
• wherein a gas is filled between the organic compound layer and the second conductive layer.

A memory device comprising:

• a memory cell array including memory elements arranged in a matrix form;
• and
• a reading circuit,
• wherein each of the memory elements includes a first conductive layer, an organic compound layer including conductive particles dispersed therein, on the first conductive layer, and a second conductive layer over the organic compound layer,
• wherein an organic compound included in the organic compound layer has a site that can photoisomerize,
• wherein at least one of the first conductive layer and the second conductive layer has a light transmitting property, and
• wherein a portion of the organic compound layer is irradiated with light, a periphery of the irradiated portion is isomerized and becomes a projecting portion, and the second conductive layer comes into contact with the first conductive layer through the projecting portion.

A memory device comprising:

• a memory cell array including memory cells arranged in a matrix form;
• and
• a reading circuit,
• wherein each of the memory cells includes a transistor and a memory element,
• wherein the memory element includes a first conductive layer, an organic compound layer including conductive particles dispersed therein, on the first conductive layer, and a second conductive layer having a light transmitting property, over the organic compound layer,
• wherein an organic compound included in the organic compound layer has a site that can photoisomerize, and
• wherein a gas is filled between the organic compound layer and the second conductive layer.

A memory device comprising:

• a memory cell array including memory cells arranged in a matrix form;
• and
• a reading circuit,
• wherein each of the memory cells includes a transistor and a memory element,
• wherein the memory element includes a first conductive layer, an organic compound layer including conductive particles dispersed therein, on the first conductive layer, and a second conductive layer over the organic compound layer,
• wherein an organic compound included in the organic compound layer has a site that can photoisomerize,
• wherein at least one of the first conductive layer and the second conductive layer has a light transmitting property, and
• wherein a portion of the organic compound layer is irradiated with light, a periphery of the irradiated portion is isomerized and becomes a projecting portion, and the second conductive layer comes into contact with the first conductive layer through the projecting portion.

A memory device comprising:

• a memory element including a first conductive layer, an organic compound layer including a conductive material in contact with the first conductive layer, and a second conductive layer over the organic compound layer,
• wherein a space is provided between the organic compound layer and the second conductive layer,
• wherein an organic compound included in the organic compound layer has a site that can photoisomerize,
• wherein at least one of the first conductive layer and the second conductive layer has a light transmitting property, and
• wherein a gas is filled between the organic compound layer and the second conductive layer.

A semiconductor device comprising:

• a memory element including a first conductive layer, an organic compound layer including conductive particles dispersed therein, on the first conductive layer, and a second conductive layer over the organic compound layer,
• a conductive layer functioning as an antenna;
• a first transistor connected to the first conductive layer or the second conductive layer of the memory element;
• and
• a second transistor connected to the conductive layer functioning as the antenna,
• wherein an organic compound included in the organic compound layer has a site that can photoisomerize,
• wherein at least one of the first conductive layer and the second conductive layer has a light transmitting property, and
• wherein a gas is filled between the organic compound layer and the second conductive layer.