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US 7,679,104 B2Granted
Vertical type semiconductor device and manufacturing method of the device
AssigneeFurukawa Electric Co., Ltd.
InventorsYoshihiro Sato, Sadahiro Kato, Masayuki Iwami, Hitoshi Sasaki, Shinya Ootomo, Yuki Niiyama
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Abstract
A vertical semiconductor element comprises: an electro-conductive substrate; a GaN layer, as a nitride compound semiconductor layer, which is selectively grown as a convex shape on one surface of the electro-conductive substrate through a buffer layer; a source electrode as a first electrode formed on the GaN layer; and a drain electrode as a second electrode formed on another surface of the electro-conductive substrate.
Claims10
A vertical semiconductor element, comprising:
- an electro-conductive substrate;
- a buffer layer grown on one surface of the electro-conductive substrate;
- a nitride compound semiconductor layer which is selectively grown as a convex shape on the buffer layer;
- a first electrode formed on the nitride compound semiconductor layer;
- and
- a second electrode formed on another surface of the electro-conductive substrate, and in the one surface of the electro-conductive substrate, there is one part where the nitride compound semiconductor layer is formed and another part where the nitride compound semiconductor layer is not formed.
3 more elements
A manufacturing method for a vertical semiconductor element, comprising:
- a step for forming a buffer layer to grow on one surface of an electro-conductive substrate;
- a step for forming a plurality of convex shape nitride compound semiconductor layers to selectively grow on the buffer layer;
- and
- a step for forming a bypass part which connects electrically a part of the one surface of the electro-conductive substrate where the nitride compound semiconductor layer is not formed, and at least one part of the nitride compound semiconductor layer.
1 more element
Dependencies are inferred from the claim text.