Semiconductor light emitting device and method for manufacturing the same
AssigneeNichia Corporation
InventorKazuyuki Akaishi
Life of this patent
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Abstract
A semiconductor light emitting device having a semiconductor stacking structure bonded onto the support member and having excellent characteristics is provided by a preferable electrode structure. The semiconductor light emitting device comprising; a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer, wherein one principal surface of the first electrode has a portion that makes contact with the first semiconductor layer so as to establish electrical continuity and an external connection section.
Claims15
A semiconductor light emitting device comprising:
- a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other,
- a first electrode connected to the first semiconductor layer, and
- a second electrode connected to the second semiconductor layer,
- wherein one principal surface of said first electrode has (1) a portion that makes direct contact with a surface of the first semiconductor layer so as to establish electrical continuity and (2) another portion that is exposed and forms an external connection section,
- wherein said semiconductor stacking structure is formed on or above a support member,
- wherein said first electrode and said second electrode are provided between said support member and said semiconductor stacking structure, and
- wherein a bonding member fills all of a space between confronting surfaces of said support member and said semiconductor stacking structure.
A semiconductor light emitting device comprising:
- a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other,
- a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer, wherein
- one principal surface of said first electrode has (1) a portion that makes direct contact with a surface of the first semiconductor layer so as to establish electrical continuity and (2) another portion that is exposed and forms an external connection section, and wherein
- one of said first electrode and said second electrode is electrically separated into a plurality of electrode segments on or above said semiconductor stacking structure,
- wherein said semiconductor stacking structure is formed on or above a support member,
- wherein said first electrode and said second electrode are provided between said support member and said semiconductor stacking structure, and
- wherein a bonding member fills all of a space between confronting surfaces of said support member and said semiconductor stacking structure.
Dependencies are inferred from the claim text.