US 7,679,091 B2 · Photoelectric conversion element having a semiconductor and semiconductor device using the same

Abstract

A semiconductor device, particularly, a photoelectric conversion element having a semiconductor layer is demonstrated. The photoelectric conversion element of the present invention comprises, over a substrate, a photoelectric conversion layer and first and second electrodes which are electrically connected to the photoelectric conversion layer. The photoelectric conversion element further comprises a wiring board over which a third and fourth electrodes are provided. The characteristic point of the present invention is that a bonding layer, which readily forms an alloy with a conductive material, is formed over the first and second electrodes. This bonding layer improves the bonding strength between the first and third electrodes and the second and fourth electrode, which contributes to the prevention of the connection defect between the substrate and the wiring board and consequentially to high reliability of the photoelectric conversion element.

Claims25

Dependent claims

A semiconductor device comprising:

a photoelectric conversion layer formed over a substrate;
an amplifier circuit including at least two thin film transistors, wherein the amplifier circuit is formed over the substrate and is configured to amplify output current of the photoelectric conversion layer;
a first interlayer insulating film formed over the photoelectric conversion layer and the amplifier circuit;
a first electrode formed over the photoelectric conversion layer and the first interlayer insulating film, wherein the first electrode is electrically connected to the photoelectric conversion layer;
a second interlayer insulating film formed over the first interlayer insulating film, wherein the second interlayer insulting film overlaps the amplifier circuit and has an opening that reaches the first electrode;
a second electrode formed in the opening, wherein the second electrode is electrically connected to the first electrode;
and
a bonding layer formed over the second electrode, wherein the bonding layer overlaps the second interlayer insulating film and the second electrode,
wherein the bonding layer contains a metal which is capable of forming an alloy with solder.

6 more elements

A semiconductor device comprising:

a photoelectric conversion layer formed over a first substrate;
an amplifier circuit including at least two thin film transistors, wherein the amplifier circuit is formed over the first substrate and is configured to amplify output current of the photoelectric conversion layer;
a first interlayer insulating film formed over the photoelectric conversion layer and the amplifier circuit;
a first electrode formed over the photoelectric conversion layer and the first interlayer insulating film, wherein the first electrode is electrically connected to the photoelectric conversion layer;
a second interlayer insulating film formed over the first interlayer insulating film, wherein the second interlayer insulting film overlaps the amplifier circuit and has an opening that reaches the first electrode;
a second electrode formed in the opening, wherein the second electrode is electrically connected to the first electrode;
a bonding layer formed over the second electrode, wherein the bonding layer overlaps the second interlayer insulating film and the second electrode;
a conductive material formed over the bonding layer, wherein the conductive material is electrically connected to the bonding layer;
a third electrode formed over the conductive material, wherein the third electrode is electrically connected to the conductive material;
and
a second substrate formed over the third electrode,
wherein the bonding layer contains a metal which is capable of forming an alloy with solder.

9 more elements

A semiconductor device comprising:

a photoelectric conversion layer formed over a first substrate;
an amplifier circuit including at least two thin film transistors, wherein the amplifier circuit is formed over the first substrate and is configured to amplify output current of the photoelectric conversion layer;
a first interlayer insulating film formed over the photoelectric conversion layer and the amplifier circuit;
a first electrode formed over the photoelectric conversion layer and the first interlayer insulating film, wherein the first electrode is electrically connected to the photoelectric conversion layer;
a second interlayer insulating film formed over the first interlayer insulating film, wherein the second interlayer insulting film overlaps the amplifier circuit and has an opening that reaches the first electrode;
a second electrode formed in the opening, wherein the second electrode is electrically connected to the first electrode;
a third electrode formed over the second electrode, wherein the third electrode overlaps the second electrode and the second interlayer insulating film and is electrically connected to the second electrode;
a bonding layer formed over the third electrode, wherein the bonding layer overlaps the second interlayer insulating film and the third electrode and is electrically connected to the third electrode;
a conductive material formed over the bonding layer, wherein the conductive material is electrically connected to the bonding layer;
a fourth electrode formed over the conductive material, wherein the fourth electrode is electrically connected to the conductive material;
and
a second substrate formed over the fourth electrode,
wherein the bonding layer contains a metal which is capable of forming an alloy with solder.

10 more elements

Dependencies are inferred from the claim text.

Photoelectric conversion element having a semiconductor and semiconductor device using the same

Life of this patent

Photoelectric conversion element having a semiconductor and semiconductor device using the same

Life of this patent

Abstract

Claims25