Semiconductor active region of TFTs having radial crystal grains through the whole area of the region

An electroluminescence device comprising:

• a substrate having an insulating surface;
• a plurality of thin film transistors over the substrate, each thin film transistor having an active layer formed by patterning a semiconductor film over the substrate and at least a thermal oxide film on a surface of the active layer;
• a leveled insulating film provided over the thin film transistors;
• and
• a pixel electrode provided over the leveled insulating film, the pixel electrode electrically connected to the thin film transistors, respectively,
• wherein the active layer contains halogen,
• wherein the semiconductor film comprises a plurality of radial crystal grains of silicon through the whole area of the semiconductor film,
• wherein directions of anisotropy of crystal structures in active layers differ from one of said plurality of thin film transistors to another, respectively, and
• wherein each of the plurality of thin film transistors has an S-value of 100 mV/dec or less.

An electroluminescence device comprising:

• a substrate having an insulating surface;
• a plurality of thin film transistors over the substrate, each thin film transistor having an active layer formed by patterning a semiconductor film over the substrate and at least a thermal oxide film on a surface of the active layer;
• a leveled insulating film provided over the thin film transistors;
• and
• a pixel electrode provided over the leveled insulating film, the pixel electrode electrically connected to the thin film transistors, respectively,
• wherein the active layer contains halogen,
• wherein said semiconductor film comprises a plurality of crystal grains of silicon through the whole area of the semiconductor film, each of said crystal grains grows radially from each of a plurality of points distributed through the whole surface of said semiconductor film,
• wherein crystal growth directions in said active layers differ from one of said plurality of thin film transistors to another, respectively, and
• wherein each of the plurality of thin film transistors has an S-value of 100 mV/dec or less.

An electroluminescence device comprising:

• a substrate having an insulating surface;
• a plurality of thin film transistors over the substrate, each thin film transistor having an active layer formed by patterning a semiconductor film over the substrate and at least a thermal oxide film on a surface of the active layer;
• a leveled insulating film provided over the thin film transistors;
• and
• a pixel electrode provided over the leveled insulating film, the pixel electrode electrically connected to the thin film transistors, respectively,
• wherein the active layer contains halogen,
• wherein said semiconductor film comprises a plurality of crystal grains of silicon through the whole area of the semiconductor film, each of said crystal grains grows radially from each of a plurality of points distributed through the whole surface of said semiconductor film,
• wherein directions of anisotropy of crystal structures in active layers differ from one of said plurality of thin film transistors to another, respectively, and
• wherein each of the plurality of thin film transistors has an S-value of 100 mV/dec or less.