Display device, method for fabricating thin film transistor and method for fabricating thin film transistor array substrate using the said method
AssigneeLG Display Co., Ltd.
InventorsWoong Gi Jun, Gee Sung Chae, Jae Seok Heo
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Abstract
A method for fabricating a thin film transistor (TFT) on a substrate includes forming a gate electrode; forming a semiconductor layer being insulated from the gate electrode and partially overlapped with the gate electrode; sequentially forming first and second gate insulating layers between the gate electrode and the semiconductor layer, wherein the first gate insulating layer is formed of a material different from the second gate insulating layer and at least one of the first and second gate insulating layers includes a sol-compound; and forming source and drain electrodes at both sides of the semiconductor layer.
Claims25
A display device comprising:
- a display panel;
- a gate driver applying scanning signals to a plurality of gate lines and a data driver applying video signals to a plurality of data lines in the display panel, the gate and data lines defining a plurality of pixels;
- and
- a thin film transistor in each pixel, the thin film transistor including a gate electrode, a gate insulating layer, a semiconductor layer, and source/drain electrodes, the gate insulating layer further having a first gate insulating layer and a second gate insulating layer, the second insulating layer including a material different from the first gate insulating layer, wherein at least one of the first and second gate insulating layers includes an organic/inorganic hybrid material,
- wherein the organic/inorganic hybrid material is a sol-gel compound of silicon alkoxide and metal alkoxide.
A thin film transistor (TFT) on a substrate, comprising:
- a gate electrode;
- a semiconductor layer insulated from the gate electrode and partially overlapped with the gate electrode;
- first and second gate insulating layers between the gate electrode and the semiconductor layer, wherein the first gate insulating layer is formed of a material different from the second gate insulating layer and at least one of the first and second gate insulating layers includes a sol-compound of silicon alkoxide and metal alkoxide;
- and
- source and drain electrodes at both sides of the semiconductor layer.
Dependencies are inferred from the claim text.