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US 7,679,075 B2Granted
Phase change memory array and fabrication thereof
AssigneesIndustrial Technology Research Institute, Powerchip Semiconductor Corp., Nanya Technology Corporation, ProMOS Technologies Inc., Winbond Electronics Corp.
InventorTe-Sheng Chao
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Abstract
A phase change memory array is disclosed, comprising a first cell having a patterned phase change layer, and a second cell having a patterned phase change layer, wherein the patterned phase change layer of the first cell and the patterned phase change layer of the second cell are disposed at different layers.
Claims20
A phase change memory array, comprising:
- a first cell, comprising a patterned phase change layer and a top electrode on the patterned phase change layer;
- and
- a second cell, comprising a patterned phase change layer and a top electrode on the patterned phase change layer,
- wherein the patterned phase change layer of the first cell and the patterned phase change layer of the second cell are disposed at different layers,
- and the top electrode of the first cell and the top electrode of the second cell are disposed at different layers.
2 more elements
A method for forming a phase change memory array, comprising:
- providing a substrate;
- forming a bottom electrode, a patterned phase change layer and a top electrode of a first cell on the substrate;
- and
- forming a bottom electrode, a patterned phase change layer and a top electrode of a second cell after forming the top electrode of the first cell,
- wherein the top electrode of the first cell and the top electrode of the second cell are disposed at different layers.
2 more elements
Dependencies are inferred from the claim text.