Metrology system of fine pattern for process control by charged particle beam

A metrology system of fine pattern for process control by charged particle beam, comprising:

• a column that includes a charged particle source, an electron optics for scanning a desired observation area on a sample with a charged particle beam emitted from the charged particle source, and a detector for detecting the charged particles generated secondarily from the sample scanned by the charged particle beam;
• information processing means for measuring information about geometry of a pattern formed on the sample based on information on the intensity of the charged particles obtained by the detector;
• and
• a sample introduction unit for introducing the sample into the inside of the column,
• wherein a charge neutralizer unit for generating ions and charge neutralizing the sample with the ions and surface potential measuring means for measuring a surface potential of the sample surface are provided on a path that is inside the sample introduction unit and transports the sample to the column, and
• wherein the metrology system is configured to correct focusing by feeding back to a retarding voltage a value of the surface potential of the sample measured by the surface potential measuring means before transportation of the sample to the column.